digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 1n645-1n649 silicon rectfier diodes available non-rohs (standard) or rohs compliant (add pbf suffix) available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number maximum ratings rating symbol value unit power dissipation at 3/8? from body, t l = 75c p tot 600 mw average forward current at t l = 75c i av 400 ma operating and storage temperature range t j , t stg -65 to 175 c thermal impedance z ? jx 35 c/w thermal resistance r ? jl 250 c/w electrical characteristics (@ 25c unless otherwise stated) reverse voltage minimum breakdown voltage@ 100a maximum average rectified current forward voltage drop maximum reverse leakage current maximum surge current (1) typical junction capacitance @-12v i o i o v f @ i f = 400ma i r @ v r v r b v 25c 150c min max 25c 150c i fsm c o part number volts volts amps amps volt s volts a a amps pf 1n645 225 275 0.4 0.15 0.8 1.0 0.05 50 5 20 1n646 300 360 0.4 0.15 0.8 1.0 0.05 50 5 20 1n647 400 480 0.4 0.15 0.8 1.0 0.05 50 5 20 1N648 500 600 0.4 0.15 0.8 1.0 0.05 50 5 20 1n649 600 720 0.4 0.15 0.8 1.0 0.05 50 5 20 note 1: surge current @ t a = 25 to 150c, t p = 120 sec. mechanical characteristics case do-35a marking body painted, alpha-numeric polarity cathode end sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
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